SBW3320 copyright@semiwell semiconductor co., ltd., all rights are reserved semiwell semiconductor 2.collector 3.emitter 1.base symbol to-3p absolute maximum ratings (t j = 25 unless otherwise specified) parameter symbol ma ximum rating unit collector-base voltage vcbo 500 v collector-emitter voltage vceo 400 v emitter-base voltage vebo 7 v collector current(dc) ic 15 a base current ib 5 a collector dissipation(tc=25 ) pc 80 w junction temperature tj 150 storage temperature tstg -65 ~ 150 switch mode series npn silicon power transistor features high voltage, high speed power switching low vce(sat) general description this device is designed for high voltage, high speed switching characteristic required such as switching regulator, inverters, motor controls. . 1 2 3 1/4 jun 2007. rev. 0
SBW3320 electrical characteristics ( tc = 25 unless otherwise noted) parameter symbol test condition min typ max unit collector-emitter breakdown voltage v ceo ic=10ma, ib=0 400 v collector-emitter breakdown voltage v ceo(sus) ic=0.2a 400 v collector cut-off current i cbo vcb=500v, ie=0 1 ma emitter cutoff current i ebo veb=7v, ic=0 1 ma dc current gain h fe vce=5v, ic=6a 10 40 - collector-emitte r saturation voltage v ce(sat) ic=6a, ib=1.2a 1 v base-emitter saturation voltage v be(sat) ic=6a, ib=1.2a 1.5 v storage time t stg 1 4 ? fall time t f vcc=5v, ic=0.5a (ui9600) 0.8 ? 2/4
SBW3320 fig. 1 static characteristics fig. 2 dc current gain fig. 3 saturation voltage fig. 4 safe operation area fig. 5 power derating 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 90 100 3/4 v ce (v) collector emitter voltage i c (a) collector current i c (a) collector current v ce (v) collector emitter voltage t c ( ) case temperature i c (a) collector current h fe dc current v be(s) , v ce(s) , saturation voltage i c (a) collector current p c (w) power dissipation
SBW3320 to-3p package dimension corresponding symbol measurement a(mm) 15.600.20 a1(mm) 13.600.20 a2(mm)dia. 9.600.20 b(mm) 19.900.20 b1(mm) 13.900.20 b2(mm) 12.760.20 b3(mm) 3.800.20 c(mm) 20.000.30 c1(mm) 3.500.20 c2(mm) 16.500.30 d(mm) 5.45(typ) d1 2.0 0.20 d2 3.00.20 d3 1.000.20 e(mm) 4.800.20 +0.15 e1(mm) 1.50 -0.05 e2(mm) 1.400.20 f(mm) 18.700.20 +0.15 g(mm) 0.60 -0.05 (mm) 3.200.10 4/4
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